深圳市科迪宝科技有限公司
Shenzhen Kedibo Technology Co.,Ltd
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RCD钳位和吸收的区别 | The difference between RCD clamping and absorption
来源:工程师 | Engineer | 作者:深圳市科迪宝科技有限公司 | Shenzhen Kedibo Technology Co.,Ltd | 发布时间: 177天前 | 1560 次浏览 | 分享到:

     











  • 钳位电容容量较大:10~47nF;   
  • 吸收电容容量较小:一般小于1~2nF;
  • 钳位电阻阻值较大;
  • 钳位电路电容每周期不完全放电,保持预充电状态;
  • 钳位电路在一定电压之上才工作,低于该电压,几乎不工作
  • 吸收电路电容每周期完全放电;
  • 开关70~200kHz反激,电容一般4~22nF;
  •  选择电阻的值很重要,不要在恶劣工况超过MOS的耐压选择;
  •  选择电阻的功率应该在最低输入电压下选择;
  • Large clamping capacitance: 10~47nF;
  • Small capacity of absorption capacitance: generally less than 1~2nF;
  • The clamping resistance has a large resistance value;
  • The capacitor of the clamp circuit is not fully discharged every cycle to maintain the pre-charge state;
  • The clamping circuit works above a certain voltage, below which it hardly works at all
  • The absorption circuit capacitance is discharged completely every cycle;
  • Switch 70~200kHz backfiring, capacitance 4~22nF;
  • It is important to select the value of the resistance. Do not exceed the MOS withstand voltage under bad conditions.
  • The power of the selected resistor should be selected at the lowest input voltage;
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